ON Semiconductort
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
2N5400
120
130
5.0
600
625
5.0
1.5
12
鈥?5 to +150
2N5401
150
160
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
Watts
mW/擄C
擄C
2N5401*
*ON Semiconductor Preferred Device
1
2
3
CASE 29鈥?1, STYLE 1
TO鈥?2 (TO鈥?26AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
擄C/W
擄C/W
2
BASE
COLLECTOR
3
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
1
EMITTER
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage
(IC = 100
mAdc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10
mAdc,
IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100擄C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
2N5401
2N5401
IEBO
V(BR)CEO
2N5400
2N5401
V(BR)CBO
2N5400
2N5401
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?/div>
50
50
50
nAdc
160
5.0
鈥?/div>
鈥?/div>
Vdc
150
鈥?/div>
Vdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
June, 2001 鈥?Rev. 0
Publication Order Number:
2N5401/D
2N5401/D相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
ETC
-
英文版
TRANSISTOR | BJT | PNP | 3.5A I(C) | STR-8
-
英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 25MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 25MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 25MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-5
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-5
ETC
-
英文版
PNP Silicon Expitaxial Planar Transistor for general purpose...
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英文版
Amplifier Transistor(PNP Silicon)
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英文版
PNP EPITAXIAL SILICON TRANSISTOR
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