1N8030-GA
Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-25...
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停產(chǎn)
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管件
停產(chǎn)
SiC(Silicon Carbide)Schottky
650 V
750mA
1.39 V @ 750 mA
無恢復(fù)時(shí)間 > 500mA(Io)
0 ns
5 μA @ 650 V
76pF @ 1V,1MHz
通孔
TO-257-3
TO-257
-55°C ~ 250°C