VP0104/VP0106/VP0109
Thermal Characteristics
Package
TO-92
I
D
(continuous)*
-0.25A
I
D
(pulsed)
-0.8A
Power Dissipation
@ T
C
= 25
擄
C
1.0W
胃
jc
擄
C/W
125
胃
ja
擄
C/W
170
I
DR
*
-0.25A
I
DRM
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
Drain-to-Source
Breakdown Voltage
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Parameter
VP0109
VP0106
VP0104
Min
-90
-60
-40
-1.5
5.8
-1.0
-3.5
6.5
-100
-10
-1
I
D(ON)
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
150
-0.15
-0.50
-0.25
-1.2
11
6.0
0.55
190
45
22
3
4
3
8
4
-1.2
400
60
30
8
6
10
12
10
-2.0
V
ns
ns
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25鈩?/div>
I
SD
= -1.0A, V
GS
= 0V
I
SD
= -1.0A, V
GS
= 0V
pF
15
8.0
1.0
鈩?/div>
%/擄C
m
V
mV/擄C
nA
碌A(chǔ)
mA
A
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
鹵20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
I
D
= -1.0mA, V
GS
= 0V
Typ
Max
Unit
Conditions
Notes:
1. All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
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