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VP0109ND Datasheet

  • VP0109ND

  • P-Channel Enhancement-Mode Vertical DMOS FETs

  • 4頁

  • SUPERTEX   SUPERTEX

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VP0104
VP0106
VP0109
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
-40V
-60V
-90V
R
DS(ON)
(max)
8.0鈩?/div>
8.0鈩?/div>
8.0鈩?/div>
I
D(ON)
(min)
-0.5A
-0.5A
-0.5A
Order Number / Package
TO-92
VP0104N3
VP0106N3
VP0109N3
Die
鈥?/div>
鈥?/div>
鈥?/div>
VP0109ND
Features
鉂?/div>
Free from secondary breakdown
鉂?/div>
Low power drive requirement
鉂?/div>
Ease of paralleling
鉂?/div>
Low C
ISS
and fast switching speeds
鉂?/div>
Excellent thermal stability
鉂?/div>
Integral Source-Drain diode
鉂?/div>
High input impedance and high gain
鉂?/div>
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex鈥檚 well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
鉂?/div>
Motor controls
鉂?/div>
Converters
鉂?/div>
Amplifiers
鉂?/div>
Switches
鉂?/div>
Power supply circuits
鉂?/div>
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
SGD
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
07/08/02
TO-92
BV
DSS
BV
DGS
20V
-55擄C to +150擄C
300擄C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1

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    P-Channel Enhancement-Mode Vertical DMOS FETs
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  • 英文版
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    P-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    P-Channel Enhancement-Mode Vertical DMOS FETs
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    MOSFET P-CH 40V 0.25A TO92-3

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