IRFZ44ND
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves
Fig. 10 鈥?On-Resistance vs. Junction
Temperature
2.0
1
Fig. 11 鈥?Thermal Impedance
D = 0.5
R
螛JC
(norm)
-- Normalized Thermal
Impedance
1.8
1.6
1.4
1.2
1
0.8
V
GS
= 10V
I
D
= 25A
0.2
P
DM
0.1
0.1
0.05
Single Pulse
t
1
t
2
0.6
--50 --25
0
25
50
75
100
125
150
175
0.01
0.0001
0.001
0.01
0.1
1
10
T
J
-- Junction Temperature (擄C)
Pulse Duration (sec.)
Fig. 12 鈥?Power vs. Pulse Duration
1000
1000
Fig. 13 鈥?Maximum Safe Operating Area
800
R
DS(ON)
Limit
I
D
-- Drain Current (A)
Power (W)
600
100
1m
100ms
10
0
碌
s
s
400
10
ms
10
DC
200
0
0.0001
1
0.001
0.01
0.1
1
10
1
10
100
Pulse Duration (sec.)
V
DS
-- Drain-Source Voltage (V)