IRFZ44ND
N-Channel Enhancement-Mode MOSFET Die
Ratings and
Characteristic Curves
Fig. 6 - Source-Drain Diode
Forward Voltage
100
V
GS
= 0V
0.04
I
D
= 25A
Fig. 7 鈥?On-Resistance
vs. Gate-to-Source Voltage
10
R
DS(ON)
-- On-Resistance (鈩?
0.03
1
0.02
0.1
0.01
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
鈥?Source-to-Drain Voltage (V)
0
4
5
6
7
8
9
10
V
GS
-- Gate-to-Source Voltage (V)
Fig. 8 鈥?Breakdown Voltage vs.
Junction Temperature
82
Fig. 9 鈥?Threshold Voltage
2.8
BV
DSS
-- Drain-to-Source Breakdown
Voltage (V)
80
78
76
74
72
70
68
66
64
--50 --25
0
25
50
75
100
125
150
175
0.8
--50 --25
0
25
50
75
100
125
150
175
V
GS(th)
-- Gate-to-Source
Threshold Voltage (V)
T
J
-- Junction Temperature (擄C)
2.4
2
1.6
1.2