IRFZ44ND
N-Channel Enhancement-Mode MOSFET Die
Electrical Characteristics
(T
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
(1)
Gate Threshold Voltage
Forward Transconductance
(1)
Drain-Source Leakage Current
Gate-Source Leakage
Dynamic
Total Gate Charge
(1)
Gate-Source Charge
(1)
Gate-Drain (鈥淢iller鈥? Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Continuous Source Current
Pulsed Source Current
(2)
Diode Forward Voltage
(1)
Source-Drain Reverse Recovery Time
(1)
Source-Drain Reverse Recovery Charge
(1)
I
S
I
SM
V
SD
t
rr
Q
rr
鈥?/div>
鈥?/div>
I
S
= 25A, V
GS
= 0V
I
F
= 25A, di/dt = 100A/碌s
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.93
53
93
49
160
1.3
鈥?/div>
鈥?/div>
A
V
ns
nC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 44V, I
D
= 25A,V
GS
= 5V
V
DS
= 44V, V
GS
= 10V
I
D
= 25A
V
DD
= 28V
I
D
= 25A, R
G
= 12鈩?/div>
R
D
= 1.1鈩? V
GEN
= 10V
V
GS
= 0V
V
DS
= 25V
f = 1.0MH
Z
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
29
60
11
13
19
185
85
165
3223
308
135
40
65
鈥?/div>
鈥?/div>
34
240
119
210
鈥?/div>
鈥?/div>
鈥?/div>
pF
ns
nC
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
GS
= 10V, I
D
= 25A
V
GS
= 6V, I
D
= 23A
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
DS
= 25V, I
D
= 25A
V
DS
= 55V, V
GS
= 0V
V
GS
=
鹵
20V, V
DS
= 0V
55
鈥?/div>
鈥?/div>
2.0
17
鈥?/div>
鈥?/div>
鈥?/div>
16
18
鈥?/div>
78
鈥?/div>
鈥?/div>
鈥?/div>
20
22
4.0
鈥?/div>
25
V
m鈩?/div>
V
S
碌A(chǔ)
nA
J
= 25擄C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
鹵
100
Notes:
(1) Pulse width
鈮?/div>
300碌s; duty cycle
鈮?/div>
2%
(2) Repetitive rating; pulse width limited by max. junction temperature
V
DD
Switching
Test Circuit
V
IN
D
R
D
V
OUT
Switching
Waveforms
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
t
f
90 %
10%
INVERTED
90%
V
GEN
R
G
G
DUT
Output, V
OUT
10%
50%
50%
S
Input, V
IN
10%
PULSE WIDTH
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