.
鈩?/div>
%/擄C
mhos
Symbol
BV
DSX
V
GS(OFF)
鈭哣
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Source
Breakdown Voltage
Gate-to-Source OFF Voltage
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Conditions
V
GS
= -5V, I
D
= 100碌A(chǔ)
V
DS
= 25V, I
D
= 10碌A(chǔ)
V
DS
= 25V, I
D
= 10碌A(chǔ)
V
GS
=
鹵
20V, V
DS
= 0V
V
GS
= -10V, V
DS
= Max Rating
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 200mA
V
GS
= 0V, I
D
= 200mA
I
D
= 300mA, V
DS
= 10V
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
I
DSS
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
600
V
DD
= 25V,
I
D
= 200mA,
R
GEN
= 10鈩?/div>
V
GS
= -10V, I
SD
= 200mA
V
GS
= -10V, I
SD
= 1A
Notes:
1. All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
V
DD
90%
INPUT
-10V
R
L
PULSE
GENERATOR
R
gen
OUTPUT
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
D.U.T.
10%
10%
INPUT
OUTPUT
0V
90%
90%
8-10
1
2
3
4
