DN2624ND Datasheet

IC型號(hào)：
DN2624ND
PDF描述：
N-Channel Depletion-Mode Vertical DMOS FETs
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54.93KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
SUPERTEX

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N-Channel Depletion-Mode

Vertical DMOS FETs

Ordering Information

DSX

DGX

240V

DS(ON)

(max)

4.0鈩?/div>

DSS

(min)

600mA

Order Number / Package

TO-92

DN2624N3

Die

DN2624ND

E鈥?/div>

鈥揙

DN2624

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Advanced DMOS Technology

These low threshold depletion-mode (normally-on) transistors

utilize an advanced vertical DMOS structure and Supertex鈥檚

well-proven silicon-gate manufacturing process. This combina-

tion produces devices with the power handling capabilities of

bipolar transistors and with the high input impedance and posi-

tive temperature coefficient inherent in MOS devices. Character-

istic of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Supertex鈥檚 vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

Power supply circuits

Telecom

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

DSX

DGX

鹵

20V

-55擄C to +150擄C

300擄C

SGD

TO-92

Note:

See Package Outline section for dimensions.

8-9

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DN2624ND Datasheet

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