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PBSS301ND Datasheet

  • PBSS301ND

  • 20 V, 4 A NPN low VCEsat (BISS) transistor

  • 120.29KB

  • 16頁

  • PHILIPS

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Philips Semiconductors
PBSS301ND
20 V, 4 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[2]
[3]
[4]
[1]
[2] [5]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
350
208
160
113
50
45
Unit
K/W
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from
junction to solder point
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Operated under pulsed conditions: Duty cycle
未 鈮?/div>
10 % and pulse width t
p
鈮?/div>
10 ms.
10
3
Z
th(j-a)
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
006aaa271
10
(8)
(9)
(10)
1
10
鈭?
10
鈭?
10
鈭?
10
鈭?
10
鈭?
10
鈭?
1
10
10
2
t
p
(s)
10
3
FR4 PCB; standard footprint
(1)
= 1
(2)
= 0.75
(3)
= 0.5
(4)
= 0.33
(5)
= 0.2
(6)
= 0.1
(7)
= 0.05
(8)
= 0.02
(9)
= 0.01
(10)
= 0
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14958
漏 Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 鈥?25 April 2005
4 of 16

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