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PBSS301ND Datasheet

  • PBSS301ND

  • 20 V, 4 A NPN low VCEsat (BISS) transistor

  • 16頁

  • PHILIPS

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PBSS301ND
20 V, 4 A NPN low V
CEsat
(BISS) transistor
Rev. 02 鈥?25 April 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
NPN low V
CEsat
Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
PNP complement: PBSS301PD.
1.2 Features
s
s
s
s
s
Very low collector-emitter saturation resistance
Ultra low collector-emitter saturation voltage
4 A continuous collector current
Up to 15 A peak current
High ef鏗乧iency due to less heat generation
1.3 Applications
s
s
s
s
s
s
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
single pulse;
t
p
鈮?/div>
1 ms
I
C
= 4 A;
I
B
= 400 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
50
Max
20
4
15
70
Unit
V
A
A
m鈩?/div>
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Pulse test: t
p
鈮?/div>
300
碌s; 未 鈮?/div>
0.02.

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