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PBSS301ND Datasheet

  • PBSS301ND

  • 20 V, 4 A NPN low VCEsat (BISS) transistor

  • 16頁

  • PHILIPS

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Philips Semiconductors
PBSS301ND
20 V, 4 A NPN low V
CEsat
(BISS) transistor
Table 5:
Limiting values
鈥ontinued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
鈭?5
鈭?5
Max
150
+150
+150
Unit
擄C
擄C
擄C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Operated under pulsed conditions: Duty cycle
未 鈮?/div>
10 % and pulse width t
p
鈮?/div>
10 ms.
1600
P
tot
(mW)
1200
(1)
006aaa270
800
(2)
(3)
400
(4)
0
鈭?5
鈭?5
25
75
125
175
T
amb
(擄C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB; mounting pad for collector 6 cm
2
(3) FR4 PCB; mounting pad for collector 1 cm
2
(4) FR4 PCB; standard footprint
Fig 1. Power derating curves
9397 750 14958
漏 Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 鈥?25 April 2005
3 of 16

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