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PBSS301ND Datasheet

  • PBSS301ND

  • 20 V, 4 A NPN low VCEsat (BISS) transistor

  • 16頁(yè)

  • PHILIPS

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Philips Semiconductors
PBSS301ND
20 V, 4 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
1
2
3
6
5
4
3
4
sym014
Simpli鏗乪d outline
Symbol
1, 2, 5, 6
3. Ordering information
Table 3:
Ordering information
Package
Name
PBSS301ND
SC-74
Description
plastic surface mounted package; 6 leads
Version
SOT457
Type number
4. Marking
Table 4:
Marking codes
Marking code
C6
Type number
PBSS301ND
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
single pulse;
t
p
鈮?/div>
1 ms
T
amb
鈮?/div>
25
擄C
[2]
[3]
[4]
[1]
[2] [5]
Conditions
open emitter
open base
open collector
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Max
20
20
5
4
15
0.8
2
360
600
750
1.1
2.5
Unit
V
V
V
A
A
A
A
mW
mW
mW
W
W
single pulse;
t
p
鈮?/div>
1 ms
9397 750 14958
漏 Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 鈥?25 April 2005
2 of 16

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