Philips Semiconductors
PBSS301ND
20 V, 4 A NPN low V
CEsat
(BISS) transistor
10
I
C
(A)
8
006aaa334
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10
2
R
CEsat
(鈩?
10
006aaa335
6
(8)
1
(9)
4
(10)
(1)
10
鈭?
(2)
(3)
2
0
0
0.4
0.8
1.2
1.6
2.0
V
CE
(V)
10
鈭?
10
鈭?
1
10
10
2
10
3
10
4
10
5
I
C
(mA)
T
amb
= 25
擄C
(1) I
B
= 80 mA
(2) I
B
= 72 mA
(3) I
B
= 64 mA
(4) I
B
= 56 mA
(5) I
B
= 48 mA
(6) I
B
= 40 mA
(7) I
B
= 32 mA
(8) I
B
= 24 mA
(9) I
B
= 16 mA
(10) I
B
= 8 mA
I
C
/I
B
= 20
(1) T
amb
= 100
擄C
(2) T
amb
= 25
擄C
(3) T
amb
=
鈭?5 擄C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14958
漏 Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 鈥?25 April 2005
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