SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 聳 JANUARY 1996
FEATURES
* V
DS
- 200V
7
ZVP1320F
D
S
PARTMARKING DETAIL -
MT
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25擄C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-100
80
25
50
15
5
8
8
8
16
-200
-1.5
-3.5
20
-10
-50
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-200
-35
-400
鹵
20
UNIT
V
mA
mA
V
mW
擄C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
MAX. UNIT CONDITIONS.
V
V
nA
碌
A
碌
A
I
D
=-1mA, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=
鹵
20V, V
DS
=0V
V
DS
=-200V, V
GS
=0V
V
DS
=-160V, V
GS
=0V,
T=125擄C
(2)
V
DS
=-25V, V
GS
=-10V
V
GS
=-10V, I
D
=-50mA
V
DS
=-25V, I
D
=-50mA
mA
鈩?/div>
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
鈮?/div>
-25V, I
D
=-50mA
(1) Measured under pulsed conditions. Width=300
碌
s. Duty cycle
鈮?/div>
2% (2) Sample test.
(3) Switching times measured with 50
鈩?/div>
source impedance and <5ns rise time on a pulse generator
3 - 423
1
2
3
