鈩?/div>
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
鈮?5V,
I
D
=1A, V
GS
=10V
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=鹵 20V, V
DS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=80V, V
GS
=0V, T=125擄C
(2)
V
DS
=25V, V
GS
=5V
V
GS
=5V, I
D
=250mA
V
GS
=10V, I
D
=500mA
V
DS
=25V, I
D
=500mA
Gate-Source Threshold Voltage V
GS(th)
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I
GSS
I
DSS
I
D(on)
R
DS(on)
Forward Transconductance(1)(2) g
fs
Input Capacitance (2)
Common Source Output
Capacitance (2)
C
iss
C
oss
Reverse Transfer Capacitance (2) C
rss
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300碌s. Duty cycle
鈮?%
(2) Sample test.
(3) Switching times measured with 50鈩?source impedance and <5ns rise time on a pulse generator
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