N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 聳 APRIL 94
FEATURES
* 170 Volt BV
DS
APPLICATIONS
* Telephone handsets
ZVN0117TA
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25擄C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
170
160
2
鹵
20
UNIT
V
mA
A
V
mW
擄C
700
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
SYMBOL MIN.
BV
DSS
I
GSS
I
DSS
I
D(on)
R
DS(on)
100
23
23
170
100
10
50
MAX.
UNIT CONDITIONS.
V
nA
碌
A
碌
A
Drain-Source Breakdown
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
I
D
=10
碌
A, V
GS
=0V
V
GS
=
鹵
15V, V
DS
=0V
V
DS
=170 V, V
GS
=0
V
DS
=140 V, V
GS
=0V,
T=50擄C
(2)
V
DS
=3V, V
GS
=3.3V
V
GS
=3.3V,I
D
=100mA
V
GS
=3V,I
D
=30mA
mA
鈩?/div>
鈩?/div>
(1) Measured under pulsed conditions. Width=300
碌
s. Duty cycle
1
