SOT323 NPN SILICON PLANAR
VHF TRANSISTOR
ISSUE 1 鈥?DECEMBER 1998
PARTMARKING DETAIL 鈥?T3
7
ZUMTS20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
30
20
4
25
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector Cut-Off
Current
SYMBOL
I
CBO
MIN.
TYP.
MAX.
100
10
UNIT
nA
碌A(chǔ)
CONDITIONS.
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0,
T
amb
=100擄C
I
C
=7mA, V
CE
=10V*
I
C
=7mA, V
CE
=10V*
Base-Emitter Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
V
BE
h
FE
40
740
85
900
mV
f
T
275
450
MHz
I
C
=5mA, V
CE
=10V
f=100MHz
I
C
=1mA, V
CE
=10V
f=1MHz
I
E
=I
e
=0, V
CB
=10V
f=1MHz
Feedback Capacitance
C
re
0.35
0.40
pF
Collector Capacitance
C
TC
0.8
pF
* Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
1
