PARTMARKING DETAIL 鈥?/div>
ZUMTS17 - T4
ZUMTS17H - T4H
ZUMTS17
ZUMTS17H
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
25
15
2.5
50
25
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
ZUMTS17H
Transition
Frequency
f
T
SYMBOL
I
CBO
MIN.
TYP.
MAX.
10
10
25
20
70
1.0
1.3
Feedback Capacitance
Collector Capacitance
Emitter Capacitance
Noise Figure
Intermodulation
Distortion
-C
re
C
Tc
C
Te
N
d
im
4.5
-45
0.85
1.5
2.0
150
125
200
GHz
GHz
pF
pF
pF
dB
dB
UNIT
nA
碌A
CONDITIONS.
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0,
T
amb
= 100擄C
I
C
=2.0mA, V
CE
=1.0V
I
C
=25mA, V
CE
=1.0V
I
C
=2.0mA, V
CE
=1.0V
I
C
=2.0mA, V
CE
=5.0V
f=500MHz
I
C
=25mA, V
CE
=5.0V
f=500MHz
I
C
=2.0mA, V
CE
=5V, f=1MHz
I
E
=I
e
=0, V
CB
=10V,
f=1MHz
I
C
=I
c
=0, V
EB
=5.0V,
f=1MHz
I
C
=2.0mA, V
CE
=5.0V
R
S
=50鈩? f=500MHz
I
C
=10mA, V
CE
=6.0V
R
L
=37.5鈩?T
amb
=25擄C
V
o
=100mV at f
p
=183MHz
V
o
=100mV at f
q
=200MHz
measured at f
(2q-p)
=217MHz
h
FE
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?%
Spice parameter data is available upon request for this device
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