SOT323 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 鈥?FEBRUARY 1999
PARTMARKING DETAILS
ZUMT817-25 -
ZUMT817-40 -
T7
T23
ZUMT817-25
ZUMT817-40
COMPLEMENTARY TYPES
ZUMT817-25 -
ZUMT817-40 -
ZUMT807-25
ZUMT807-40鈥?T7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
VALUE
50
45
5
1
500
100
200
330
-55 to +150
UNIT
V
V
V
A
mA
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward
Current Transfer Ratio
-25
-40
Transition
Frequency
Collector-base
Capacitance
f
T
C
obo
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
160
250
200
5.0
MIN.
TYP.
MAX. UNIT CONDITIONS.
700
1.2
600
400
600
mV
V
pF
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
10
0.1
5
A
A
A
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=150擄C
V
EB
=5V, I
C
=0
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
MHz
I
C
=10mA, V
CE
=5V
f=35MHz
I
E
=I
e
=0, V
CB
=10V
f=1MHz
2%
1
