SOT323 NPN SILICON PLANAR
HIGH FREQUENCY TRANSISTOR
ISSUE 1- NOVEMBER 1998
FEATURES
*
High f
T
=900MHz Min
*
Max capacitance=1pF
*
Low noise 4.5dB
PARTMARKING DETAIL - T6
ZUMT5179
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
20
12
2.5
50
330
-55 to +150
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Emitter Sustaining
Voltage
Collector-Base Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Static Forward Current
Transfer Ratio
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Transition Frequency
Collector-Base Capacitance
Small Signal Current Gain
Noise Figure
Common-Emitter Amplifier
Power Gain
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
cb
h
fe
N
F
Gpe
15
25
3
900
25
MIN.
12
20
2.5
0.02
1.0
250
0.4
1.0
2000
1
300
14
4.5
ps
dB
dB
V
V
MHz
pF
MAX.
UNIT
V
V
V
碌A(chǔ)
碌A(chǔ)
CONDITIONS.
I
C
= 3mA, I
B
=0
I
C
= 1碌A(chǔ), I
E
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=15V, I
E
=0
V
CB
=15V, I
E
=0, T
amb
=150擄C
I
C
=3mA, V
CE
=1V
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
I
C
=5mA, V
CE
=6V, f=100MHz
I
E
=0, V
CB
=10V, f=1MHz
I
C
=2mA, V
CE
=6V, f=1KHz
I
E
=2mA, V
CB
=6V, f=31.9MHz
I
C
=1.5mA, V
CE
=6V
R
S
=50鈩? f=200MHz
I
C
=5mA, V
CE
=6V
f=200MHz
Collector Base Time Constant rb鈥機(jī)
c
Spice parameter data is available upon request for this device
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