SOT323 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 1 鈥?NOVEMBER 1998
FEATURES
*
Fast switching
PARTMARKING DETAIL
COMPLEMENTARY TYPE
鈥?T16
鈥?ZUMT2907A
ZUMT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
10
10
10
10
0.3
1.0
0.6
35
50
75
35
100
50
40
1.2
2.0
nA
碌A(chǔ)
nA
nA
V
V
V
V
VALUE
75
40
6
600
330
-55 to +150
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
MIN.
75
40
6
CONDITIONS.
I
C
=10碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, T
amb
=150擄C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55擄C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
300
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
1
2
