NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 聳 APRIL 94
FEATURES
* 25 Volt V
CEO
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* High Gain
* P
tot
=1.2 Watts
ZTX869
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
60
25
6
20
5
1.58
1.2
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
擄C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
R
鈮?/div>
1K
鈩?/div>
I
EBO
V
CE(sat)
25
50
100
180
880
3-306
MIN.
60
60
25
6
TYP.
120
120
35
8
50
1
50
1
10
50
80
200
220
950
MAX.
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100
碌
A
IC=1
碌
A, RB
鈮?/div>
1K
鈩?/div>
I
C
=10mA*
I
E
=100
碌
A
V
CB
=50V
V
CB
=50V, T
amb
=100擄C
V
CB
=50V
V
CB
=50V, T
amb
=100擄C
V
EB
=6V
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=100mA*
I
C
=5A, I
B
=100mA*
I
C
=5A, I
B
=100mA*
碌
A
碌
A
Base-Emitter
Saturation Voltage
V
BE(sat)
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