PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 聳 JULY 94
FEATURES
* 200 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX776
C
B
E
REFER TO ZTX755 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
derate above T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-200
-200
-5
-2
-1
1
5.7
-55 to +200
UNIT
V
V
V
A
A
W
mW/ 擄C
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
50
20
30
20
MHz
pF
MIN.
-200
-200
-5
-100
-100
-0.5
-0.5
-1.1
-1.0
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100
碌
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
碌
A, I
C
=0
V
CB
=-160V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
I
C
=-500mA, I
B
=-50mA*
IC=-500mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
