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PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 1 聳 APRIL 94

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

=1 Watt

ZTX758

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25擄C

derate above 25擄C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

E-Line

TO92 Compatible

VALUE

-400

-400

-5

-1

-500

1

5.7

-55 to +200

UNIT

V

V

V

A

mA

W

mW/ 擄C

擄C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C unless otherwise stated).

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

CES

MIN.

TYP.

MAX.

UNIT

V

V

V

-100

-100

-100

-0.30

-0.25

-0.50

-0.9

-0.9

50

50

40

3-267

nA

nA

nA

V

V

V

V

V

CONDITIONS.

I

C

=-100

碌

A

I

C

=-10mA*

I

E

=-100

碌

A

V

CB

=-320V

V

CE

=-320V

V

EB

=-4V

I

C

=-20mA, I

B

=-1mA

I

C

=-50mA, I

B

=-5mA*

I

C

=-100mA, I

B

=-10mA*

I

C

=-100mA, I

B

=-10mA*

IC=-100mA, V

CE

=-5V*

I

C

=-1mA, V

CE

=-5V

I

C

=-100mA, V

CE

=-5V*

I

C

=-200mA, V

CE

=-10V*

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector Cut-Off

Current

-400

-400

-5

Emitter Cut-Off Current I

EBO

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

V

CE(sat)

V

BE(sat)

V

BE(on)

Static Forward Current h

FE

Transfer Ratio

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