ZTX749A
ZTX749A
PNP Low Saturation Transistor
鈥?This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-35
-45
-5
-2
-55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150擄C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA
I
C
= -100碌A(chǔ)
I
E
= -100碌A(chǔ)
V
CB
= -30V
V
CB
= -30V, T
A
= 100擄C
V
EB
= -4V
I
C
= -50mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -100mA, V
CE
= -5V
f = 100MHz
100
70
100
75
15
Min.
-35
-45
-5
-100
-10
-100
Max.
Units
V
V
V
nA
碌A(chǔ)
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics*
300
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
-300
-500
-1.25
-1
100
mV
V
V
P
F
Small-Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Max.
1
125
Units
W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. C, August 2003
1
2
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