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NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 聳 APRIL 94

FEATURES

* 70 Volt V

CEO

* Gain of 400 at I

C

=500mA

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Relay drivers

* Battery powered circuits

* Motor drivers

ZTX692B

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25擄C

derate above 25擄C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

70

70

5

2

1

1.5

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

V

V

A

A

W

W

mW/擄C

擄C

Operating and Storage Temperature Range

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

500

400

150

3-241

MIN.

70

70

5

0.1

0.1

0.15

0.5

0.9

0.9

TYP.

MAX.

UNIT

V

V

V

碌

A

碌

A

CONDITIONS.

I

C

=100

碌

A

I

C

=10mA*

I

E

=100

碌

A

V

CB

=55V

V

EB

=4V

I

C

=0.1A, I

B

=0.5mA*

I

C

=1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

IC=1A, V

CE

=2V*

I

C

=100mA, V

CE

=2V

*

I

C

=500mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

V

V

V

V

next

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