NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 聳 JULY 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ZTX656
ZTX657
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX656
200
200
5
1
0.5
1
E-Line
TO92 Compatible
ZTX657
300
300
UNIT
V
V
V
A
A
W
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
50
40
30
ZTX656
MIN.
200
200
5
100
100
0.5
1
1
50
40
30
MHz
300
300
5
100
100
0.5
1
1
ZTX657
MAX.
MAX. MIN.
UNIT
V
V
V
nA
nA
nA
V
V
V
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=10mA, V
CE
=20V
f=20MHz
3-227
1
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