PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 聳 MARCH 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX554
ZTX555
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
= 25擄C
derate above 25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
ZTX554
-140
-125
-5
-2
-1
1
5.7
E-Line
TO92 Compatible
ZTX555
-160
-150
UNIT
V
V
V
A
A
W
mW/ 擄C
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
50
50
100
10
3-198
ZTX554
MIN.
-140
-125
-5
-0.1
-0.1
-0.3
-1
-1
300
50
50
100
10
MAX
ZTX555
MIN.
-160
-150
-5
-0.1
-0.1
-0.3
-1
-1
300
MHz
pF
MAX
V
V
V
碌
A
碌
A
碌
A
UNIT
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-120V
V
CB
=-140V
V
EB
=-4V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
1
2
