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PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 1 聳 MARCH 94

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

ZTX550

ZTX551

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation: at T

amb

=25擄C

derate above 25擄C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

-60

-45

-5

-2

-1

E-Line

TO92 Compatible

ZTX550 ZTX551

-80

-60

UNIT

V

V

V

A

A

W

mW/ 擄C

擄C

1

5.7

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C).

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

100

15

150

ZTX550

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-60

-45

-5

-0.1

-0.1

-0.25

-1.1

300

50

10

150

MAX. MIN.

-80

-60

-5

ZTX551

MAX.

UNIT

V

V

V

CONDITIONS.

I

C

=-100

碌

A

I

C

=-10mA*

I

E

=-100

碌

A

V

CB

=-45V

V

CB

=-60V

V

EB

=-4V

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

I

B

=-15mA*

I

C

=-150mA,

V

CE

=-10V*

I

C

=-1A, V

CE

=-10V*

-0.1

-0.1

-0.35

-1.1

150

碌

A

碌

A

碌

A

V

V

MHz

I

C

=-50mA, V

CE

=-10V

f=100MHz

3-194

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