NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 聳 MARCH 94
FEATURES
* 1W P
OUT
at 175 MHz, 28V, 18dB typical
* 1W P
OUT
at 400 MHz, 28V, 9.7dB typical
* High P
tot
* High efficiency
ZTX3866
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
CM
P
tot
T
j
:T
stg
55
30
55
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
V
mA
mW
擄C
3.5
400
350
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Collector-Emitter
Sustaining Voltage
Static Forward
Current Transfer
Transitional
Frequency
Output Capacitance
R.F. Power Output
Efficiency
SYMBOL
V
(BR)CBO
V
(BR)CEO(sus)
V
(BR)EBO
I
CEO
V
CE(sat)
V
(BR)CER(sus)
h
FE
f
T
C
obo
P
OUT
畏
MIN.
55
30
3.5
TYP.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=100
碌
A, I
E
=0
V
CB
=28V, I
B
=0
I
C
=100mA, I
B
=20mA
IC=5mA, R
BE
=10
鈩?/div>
I
C
=50mA, V
CE
=5V
20
1.0
55
15
400
700
3.0
700
50
900
70
200
碌
A
V
V
MHz
pF
mW
%
I
C
=25mA, V
CE
=15V
f=100MHz
V
CB
=30V, I
E
=0, f=1MHz
V
CC
=28V, P
IN
=100mW
f=400MHz
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