NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 聳 MARCH 94
FEATURES
* 40 Volt V
CEO
* 1 Amp continuous current
* Fast switching
ZTX360
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
60
40
5
1
500
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
W
擄C
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Emitter
Sustaining Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
CEO(SUS)
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ib
C
ob
t
on
t
off
0.7
25
200
36
5.75
50
10
40
75
MIN.
40
500
300
0.6
1.2
150
MHz
pF
pF
ns
ns
TYP.
MAX.
UNIT
V
nA
CONDITIONS.
I
C
=10mA, I
B
=0*
V
CB
=40V, I
E
=0
V
CB
=40V, I
E
=0, T
amb
=150擄C
I
C
=500mA, I
B
=50mA*
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=1V*
I
C
=50mA, V
CE
=10V,
f=100MHz
V
EB
=0.5V, I
C
=0, f=1MHz
VCB=10V, I
E
=0, f=1MHz
V
CC
=30V, I
C
=500mA,
=50mA, -V
BE(off)
=2V
I
B(on)
V
CC
=30V, I
C
=500mA,
=-I
=50mA
I
B(on) B(off)
碌
A
V
V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
