NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ISSUE 2 聳 MARCH 94
ZTX327
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
j
:T
stg
55
30
55
3.5
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
V
mA
W
擄C
400
1.5
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward
Current Transfer
Transitional
Frequency
Output Capacitance
R.F. power output
Efficiency
SYMBOL
V
(BR)CBO
V
(BR)CEO(sus)
V
(BR)CER(sus)
V
(BR)EBO
I
CEO
V
CE(SAT)
h
FE
f
T
C
obo
P
OUT
畏
MIN.
55
30
55
3.5
TYP.
MAX. UNIT
V
V
CONDITIONS.
I
C
=100
碌
A, I
E
=0
IC=5mA, I
B
=0
I
C
=5mA, R
BE
=10
鈩?/div>
V
20
1.0
碌
A
I
E
=100
碌
A,I
C
=0
V
CB
=45V
I
C
=100mA, I
B
.=20mA
I
C
=50mA, V
CE
=5V
V
15
500
800
3.0
350
50
440
70
MHz
pF
mW
%
I
C
=25mA, V
CE
=15V
f=100MHz
V
CE
=15V, I
C
=25mA
f=100MHz
V
CC
=12V, P
IN
=80mW
f=400MHz
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