NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 聳 MARCH 94
FEATURES
* 15 Volt V
CEO
* f
T
=500 MHz
ZTX314
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
tot
T
j
:T
stg
40
15
5
100
500
300
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mA
mW
擄C
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
Storage Time
Turn-on Time
Turn-off Time
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
V
CE(SAT)
V
BE(SAT)
h
FE
0.7
40
40
30
20
500
4
13
12
18
MIN.
40
15
5
200
30
0.2
0.5
0.85
1.6
120
120
MHz
pF
ns
ns
ns
MAX.
UNIT
V
V
V
碌
A
CONDITIONS.
I
C
=10
碌
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10
碌
A, I
C
=0
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=100擄C
I
C
=10mA, I
B
=1mA*
I
C
=100mA, I
B
=10mA*
I
C
=10mA, I
B
=1mA*
I
C
=100mA, I
B
=10mA*
I
C
=10mA, V
CE
=1V*
I
C
=10mA, V
CE
=0.35V*
I
C
=30mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=10mA, V
CE
=10V
f=100MHz
V
CB
=5V, f=1MHz
I
C
=I
B1
=I
B2
=10mA
I
C
=10mA, I
B1
=3mA
I
C
=10mA, I
B1
=3mA,
I
B2
=1.5mA
nA
V
V
V
f
T
C
obo
t
stg
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
