ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
鈥?Silicon Stabilizer Diodes
鈥?Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
鈥?The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
鈥?These diodes are also available in MiniMELF case with
the type designation LL1.5 鈥?LL 5.1.
min. 1.083 (27.5)
max. .150 (3.8)
max.
鈭?/div>
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
Dimensions are in inches
and (millimeters)
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging codes/options:
D7/10K per 13鈥?reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
max.
鈭?/div>
.020 (0.52)
Maximum Ratings
Parameter
(T
A
= 25擄C unless otherwise noted)
Symbol
Value
Unit
Operating Current (see Table 鈥淐haracteristics鈥?
Inverse Current
Power dissipation at T
amb
= 25擄C
Junction temperature
Storage temperature range
I
F
P
tot
T
J
T
S
100
300
(1)
150
鈥?55 to +150
mA
mW
擄C
擄C
Electrical and Thermal Characteristics
Parameter
Forward Voltage at I
F
= 10 mA
Temperature Coefficient of the
stabilized voltage at I
Z
= 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
(T
A
= 25擄C unless otherwise noted)
Symbol
V
F
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?6
鈥?4
鈥?/div>
Max.
1.1
鈥?/div>
鈥?/div>
400
(1)
Unit
V
10
鈥?
/擄C
10
鈥?
/擄C
擄C/W
偽
VZ
偽
VZ
R
胃JA
Thermal resistance junction to ambient air
Document Number 88425
02-May-02
www.vishay.com
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