ZO-28/F
BIAS DEVICE
Thermal Tracking
GENERAL DESCRIPTION
The ZO-28/F is a bias device designed to work with very high power BiPolar
transistors, operating Class A and AB. It has extremely low source impedance
and high current handling capability. The package may be physically mounted
to the same heat sink as the RF transistor, providing very accurate thermal
tracking.
CASE OUTLINE
55GU
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVis
Injector to Supplier Voltage
Is
Supplier Current
Ic
Controller Current
Hfe
Transistor Current Gain - Min
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
40 Watts
35 Volts
3.5 Amps
0.3 Amps
30
- 65 to +150
o
C
+200
o
C
See Case Outline for Connections
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
BVsco
BViso
BViss
Hfe
Vcr
CHARACTERISTICS
Supplier - Controller Breakdown
Injector Open
INjector - Supplier Breakdown
Controller Opne
Injector - Supplier Breakdown
Controller Shorted
DC Current Gain
Voltage Drop across Diodes
Thermal Resistance
TEST
CONDITIONS
Ii = 0. Is = 5 mA
Ii = 10 mA
Ii = 50 mA
Ii = 1 A, Vis = 5 Volts
Ii = 0A, Ic = 50 mA
MIN
4
50
90
30
1.34
1.4
1.48
4.37
o
TYP
MAX
UNITS
Volts
Volts
Volts
Volts
C/W
胃
jc
Initial Issue June, 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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