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ZHCS756 Datasheet

  • ZHCS756

  • SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”

  • 3頁(yè)

  • ZETEX

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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE 鈥淪uperBAT鈥?/div>
ISSUE 1- NOVEMBER 1997
FEATURES:
鈥?/div>
Low V
F
鈥?/div>
High Current Capability
APPLICATIONS:
鈥?/div>
DC - DC converters
鈥?/div>
Mobile telecomms
鈥?/div>
PCMCIA
PARTMARK DETAIL: S76
7
1
ZHCS756
C
1
A
3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
F
= 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t鈮?00碌s
t鈮?0ms
Power Dissipation at T
amb
= 25擄 C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
60
750
610
1500
12
5
500
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄 C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
60
TYP.
80
250
285
350
440
520
600
760
50
17
12
290
330
410
500
610
700
900
100
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
碌A(chǔ)
pF
ns
CONDITIONS.
I
R
= 300碌A(chǔ)
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 45V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300碌s; duty cycle
鈮?%
.

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