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ZHCS1000 Datasheet

  • ZHCS1000

  • SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT”

  • 166.85KB

  • 3頁

  • ZETEX

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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE 鈥漇uperBAT鈥?/div>
ISSUE 2 - OCTOBER 1997
7
1
ZHCS1000
C
1
A
3
FEATURES:
鈥?/div>
High current capability
鈥?/div>
Low V
F
APPLICATIONS:
鈥?/div>
Mobile telecomms, PCMIA & SCSI
鈥?/div>
DC-DC Conversion
PARTMARKING DETAILS : ZS1
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
F
= 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t鈮?00碌s
t鈮?0ms
Power Dissipation at T
amb
= 25擄 C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
40
1000
425
1750
12
5.2
500
-55 to + 150
125
SOT23
UNIT
V
mA
mV
mA
A
A
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄 C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
40
TYP.
60
240
265
305
355
390
425
495
420
50
25
12
270
290
340
400
450
500
600
鈥?/div>
100
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
mV
碌A(chǔ)
pF
ns
CONDITIONS.
I
R
= 300碌A(chǔ)
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
*
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
1000mA,T
a
= 100擄 C
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 30V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
=
500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300碌s. Duty cycle
鈮?%

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