SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT1147
C
1
C
1
C
2
C
2
PARTMARKING DETAIL 鈥?ZDT1147
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
T
j
:T
stg
VALUE
-15
-12
-5
-20
-5
-500
-55 to +150
UNIT
V
V
V
A
A
mA
擄C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25擄C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Derate above 25擄C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Thermal Resistance - Junction to Ambient*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
SYMBOL
P
tot
2.0
2.75
18
22
55.6
45.5
W
W
mW/ 擄C
mW/ 擄C
擄C/ W
擄C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
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