SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
ZDM4306N
D
1
D
1
D
2
D
2
PARTMARKING DETAIL 鈥?M4306N
G
1
S
1
G
2
S
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25擄C
Pulsed Drain Current
Gate-Source Voltage
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
T
j
:T
stg
VALUE
60
2
15
鹵
20
-55 to +150
UNIT
V
A
A
V
擄C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25擄C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Derate above 25擄C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Thermal Resistance - Junction to Ambient*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
SYMBOL
P
tot
2.5
3.0
20
24
50.0
41.6
W
W
mW/ 擄C
mW/ 擄C
擄C/ W
擄C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
Note:
This data is derived from development material and does not necessarily mean that the device will
go into production
3 - 321
1
2
3
