SOT23 SILICON DUAL
VARIABLE CAPACITANCE DIODE
ISSUE 2 鈥?JANUARY 1998
FEATURES
* VHF to UHF operation
* Common Cathode Dual Diode
* Monolithic construction
APPLICATIONS
* Mobile radios and Pagers
* Cellular telephones
* Voltage controlled Crystal Oscillators
PARTMARKING DETAIL ZDC833A 鈥?C2A
PIN CONFIGURATION
1
ZDC833A
2
1
3
2
3
SOT23
ABSOLUTE MAXIMUM RATINGS.(Each Diode)
PARAMETER
Forward Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
VALUE
200
330
-55 to +150
UNIT
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C ). (Each Diode)
PARAMETER
Reverse Breakdown
Voltage
Reverse Leakage
Current
Temperature
Coefficient
Diode Capacitance
Capacitance Ratio
Figure of Merit
SYMBOL
V
BR
MIN.
25
TYP.
MAX.
UNIT
V
CONDITIONS.
I
R
= 10碌A
V
R
= 20V
I
R
畏
0.2
10
nA
400
ppm/擄C
V
R
= 3V, f=1MHz
C
d
C
d
/ C
d
Q
29.7
5.0
200
33
36.3
6.5
pF
V
R
= 2V, f=1MHz
V
R
= 2V/20V, f=1MHz
V
R
= 3V, f=50MHz
1
2
