N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 聳 MAY 94
ZCN0545A
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* Extremely low on state voltage
* No need to derate for higher temperatures
* Excellent temperature immunity
* High input impedance
* Reverse blocking characteristic which is
Independent of gate bias
* Low input capacitance
* Characterised for logic level drive
APPLICATIONS
* Fluorescent lamp driver
* Automotive load drivers
* High voltage DC-DC converters
* Darlington replacement
* Telecoms hook switch and earth recall switch
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS (at T
amb
=25擄C unless otherwise stated)
PARAMETER
SYMBOL
V
DS
V
SD
I
D
I
DP
I
DMR
I
DM
V
GS
P
tot
P
DP
T
j
:T
stg
@ T
amb
=25擄C
@ T
amb
=125擄C
VALUE
450
30
0.32
0.37
2
1
鹵
20
UNIT
V
V
A
A
A
A
V
W
W
擄C
Forward Drain-Source Voltage
Reverse Drain Source Voltage
Continuous Drain Current
Practical Continuous Drain Current*
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25擄C
Practical Power Dissipation*
Operating and Storage Temperature Range
0.6
0.8
-55 to +125
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
3-112
1
2
3
