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XSD57120 Datasheet

  • XSD57120

  • RF POWER TRANSISTORS The LdmoSTFAMILY

  • 66.05KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
SD57120
RF POWER TRANSISTORS
The
LdmoST
FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
P
OUT
= 120 W with 13 dB gain @ 960 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
錕?frac12;
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applications requiring high linearity.
M252
epoxy sealed
ORDER CODE
BRANDING
SD57120
XSD57120
PIN CONNECTION
1. Drain
2. Drain
3. Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DI SS
T
j
T
STG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ T c= 70 C)
Max. O perating Junction Temperature
Storage Temperature
o
4. Gate
5. Gate
Value
65
鹵
20
14
236
200
-65 to 150
Uni t
V
V
A
W
o
o
C
C
THERMAL DATA
R
th (j-c)
Junction-Case Thermal Resistance
0.55
o
C/W
March 2000
1/7

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