Composite Transistors
XP6534
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For high-frequency amplification
2.1鹵0.1
0.65
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
s
Features
0.65
1
2
3
6
5
4
0.9鹵0.1
q
2SC2404
脳
2 elements
0.7鹵0.1
0 to 0.1
0.2鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
15
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Marking Symbol:
7F
Internal Connection
1
Tr1
6
5
4
藲C
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Forward current transfer h
FE
ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
*1
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE
h
FE
(small/large)
*1
V
BE
C
re
f
T
NF
PG
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA, f = 10.7MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
450
min
30
3
40
0.5
0.99
720
0.8
650
3.3
24
1
mV
pF
MHz
dB
dB
260
typ
max
Unit
V
V
Ratio between 2 elements
0.12
鈥?.02
s
Basic Part Number of Element
0.2
+0.05
1
1
2
