Composite Transistors
XP1507
Silicon NPN epitaxial planer transistor
Unit: mm
2.1鹵0.1
0.425
1.25鹵0.1
0.425
0.2鹵0.05
0.12
鈥?0.02
+0.05
High breakdown voltage and for low noise amplification
0.65
s
Features
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
1
2
3
5
0.65
4
0.9鹵 0.1
q
2SD814
脳
2 elements
0.7鹵0.1
s
Basic Part Number of Element
0.2
0 to 0.1
0.2鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
150
150
5
50
100
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC鈥?8A
S鈥揗ini Type Package (5鈥損in)
Marking Symbol:
4O
Internal Connection
1
2
3
4
Tr1
5
Tr2
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25藲C)
Symbol
V
CEO
V
EBO
I
CBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
2.3
90
0.5
0.99
1
V
MHz
pF
min
150
5
1
450
typ
max
Unit
V
V
碌A(chǔ)
Ratio between 2 elements
1
1
2
