XP134A11A1SR
Power MOS FET
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P-Channel Power MOS FET
x
DMOS Structure
x
Low On-State Resistance: 0.11鈩?MAX
x
Ultra High-Speed Switching
x
SOP-8 Package
x
Two FET Devices built-in
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General Description
The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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Applications
q
Notebook PCs
q
Cellular and portable phones
q
On-board power supplies
q
Li-ion battery systems
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Features
Low on-state resistance:
Rds(on)=0.065鈩?Vgs=-10V)
Rds(on)=0.11鈩?Vgs=-4.5V)
Ultra high-speed switching
Operational Voltage:
-4.5V
High density mounting:
SOP-8
u
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Pin Configuration
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
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Pin Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
SOP-8
(TOP VIEW)
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Equivalent Circuit
1
2
3
4
P-Channel MOS FET
(2 devices built-in)
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Absolute Maximum Ratings
PARAMETER
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-30
鹵20
-4
-16
-4
2
150
-55~150
Ta=25:
UNITS
V
V
A
A
A
W
:
:
8
7
6
5
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
429
1
2
3
4
