Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.045鈩?(max)
NUltra
High-Speed Switching
NSOP-8
Package
NTwo
FET Devices Built-in
鈻燗pplications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
鈻燝eneral Description
The XP133A1145SR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
鈻燜eatures
Low on-state resistance
: Rds(on)=0.033鈩?(Vgs=10V)
: Rds(on)=0.045鈩?(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage
: 4.5V
High density mounting
: SOP-8
鈻燩in Configuration
S1
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G1
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S2
錛?/div>
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鈻燩in Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
D1
D1
D2
D2
G2
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SOP-8
(TOP VIEW)
鈻燛quivalent Circuit
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錛?/div>
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N-Channel MOS FET
(2 devices built-in)
鈻燗bsolute Maximum Ratings
Ta=25擄C
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
鹵20
6
20
6
2
150
-55~150
UNITS
V
V
A
A
A
W
擄C
擄C
11
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Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
759
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XP133A1145SR相關(guān)型號PDF文件下載
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