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XP132A1545SR Datasheet

  • XP132A1545SR

  • Power MOS FET

  • 57.24KB

  • 4頁

  • TOREX

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XP132A1545SR
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P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.045
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(max)
Ultra High-Speed Switching
SOP - 8 Package
Power MOS FET
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
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General Description
The XP132A1545SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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Features
Low on-state resistance :
Rds (on) = 0.03鈩?( Vgs = -10V )
Rds (on) = 0.045鈩?( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage :
-4.5V
High density mounting :
SOP - 8
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Pin Configuration
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
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Pin Assignment
PIN NUMBER
1-3
4
5-8
PIN NAME
S
G
D
FUNCTION
Source
Gate
Drain
u
SOP - 8 Top View
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Equivalent Circuit
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Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-30
+ 20
-8
-32
-8
2.5
150
-55 to 150
UNITS
V
V
A
A
A
W
O
1
2
3
4
8
7
6
5
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
C
C
O
P - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
393

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