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XP131A1235SR Datasheet

  • XP131A1235SR

  • Power MOSFET

  • 61.25KB

  • 4頁

  • TOREX

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XP131A1235SR
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N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.035
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(max)
Ultra High-Speed Switching
SOP - 8 Package
Power MOSFET
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Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
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General Description
The XP131A1235SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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Features
Low on-state resistance :
Rds (on) = 0.035鈩?( Vgs = 4.5V )
Rds (on) = 0.048鈩?( Vgs = 2.5V )
Ultra high-speed switching
Operational Voltage :
2.5V
High density mounting :
SOP - 8
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Pin Configuration
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
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Pin Assignment
PIN NUMBER
1-3
4
5-8
PIN NAME
S
G
D
FUNCTION
Source
Gate
Drain
u
SOP - 8 Top View
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Equivalent Circuit
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Absolute Maximum Ratings
Ta=25
O
C
PARAMETER
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
20
+ 12
7
30
7
2.5
150
-55 to 150
UNITS
V
V
A
A
A
W
O
1
2
3
4
8
7
6
5
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
C
C
O
N - Channel MOS FET
( 1 device built-in )
( note ) : When implemented on a glass epoxy PCB
353

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