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XP131A1145SR Datasheet

  • XP131A1145SR

  • Power MOS FET

  • 4頁

  • TOREX

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Power MOS FET
NN-Channel
Power MOS FET
NDMOS
Structure
NLow
On-State Resistance: 0.045鈩?(max)
NUltra
High-Speed Switching
NSOP-8
Package
鈻燗pplications
GNotebook
PCs
GCellular
and portable phones
GOn-board
power supplies
GLi-ion
battery systems
鈻燝eneral Description
The XP131A1145SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
鈻燜eatures
Low on-state resistance
: Rds(on)=0.03鈩?(Vgs=10V)
: Rds(on)=0.045鈩?(Vgs=4.5V)
Ultra high-speed switching
Operational Voltage
: 4.5V
High density mounting
: SOP-8
鈻燩in Configuration
S
錛?/div>
S
錛?/div>
S
錛?/div>
G
錛?/div>
SOP-8
錛圱OP VIEW錛?/div>
錛?/div>
錛?/div>
錛?/div>
錛?/div>
鈻燩in Assignment
D
D
D
D
PIN NUMBER
PIN NAME
錛?/div>
錛?/div>
錛?/div>
FUNCTION
1 鈭?3
4
5 鈭?8
Source
Gate
Drain
鈻燛quivalent Circuit
錛?/div>
錛?/div>
錛?/div>
錛?/div>
N-Channel MOS FET
(1 device built-in)
鈻燗bsolute Maximum Ratings
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
11
UNITS
錛?/div>
錛?/div>
錛?/div>
錛?/div>
錛?/div>
錛?/div>
鈩?/div>
鈩?/div>
Ta=25鈩?/div>
錛?/div>
錛?/div>
錛?/div>
錛?/div>
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
30
鹵
20
7
30
7
2.5
150
-55鈭?50
Channel Temperature
Storage Temperature
Note: When implemented on a glass epoxy PCB
691

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